Hynix unveils new 54nm DRAM

Friday, December 5, 2008, 5:43
Technology
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Hynix Semiconductor has announced the development of what it brags of the world’s first 2Gb mobile DRAM making use of 54nm process technology. The latest product is touted to give two times as much storage capacity over the existing 1Gb mobile solution, earlier the maximum density made available amongst the mobile DRAM products in multi-chip package (MCP) and package on package (PoP) platform.

The 2Gb mobile DRAM claims to put forward highest operating speed of 400Mbps at 1.2V power supply and processes up to 1.6GB of data each second with a 32-bit I/O. The product also boasts of consuming less power than current memory solutions.

The mass storage solution offers the functions provided with Hynix’s One Chip Solutions, which contain bendy choices to cater the particular requirements of users for both DDR DRAM and SDRAM interfaces, and both x16 and x32 organizations on a standalone chip. The 2Gb mobile DRAM fulfills all the key technical needs for mobile products: low power consumption, high memory density, speedy operating speed and small size. The product also fulfills the JEDEC standard.

It seems that the memory heavyweight is looking at a sum of 500 bln to 1 tln won ($340-$680 mln). Creditors, who cut their assets from 50% in June 2006, have said yes to keep hold of the remaining 36% until a purchaser is hit upon. Hynix has been affected a great loss due to the declining memory costs that have dropped almost 66% in 2008. Numerous industry giants have similarly been hit hard, such as Etron Technology, which of late posted amazing losses for the 1st 3Qs of 2008.

Aiming at next-generation apps for example MID (mobile Internet devices) and UMPC (ultra mobile PCs) , plus high density products, the 2Gb mobile DRAM will start on mass production in the first half of 2009, with the aim of satisfying the growing need for high performance mobile apps.